By adopting the most advanced trench gate technology and perfect structural design, Jiesheng Microelectronics' medium and low voltage MOSFETs achieve maximum power density. On the one hand, it significantly reduces the conduction power loss during the current conduction process; On the other hand, it effectively reduces the charge (Qgd) between the gate and drain, thereby reducing switching power loss during fast switching processes. Excellent FOM performance perfectly supports synchronous rectification design of fast charging power products.
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